NoMIS is advancing silicon carbide (SiC) as a reliable foundation for more efficient and sustainable power systems. In power electronics, the advantages of silicon carbide (SiC)—including enhanced ...

Ultra-low power systems operate with minimal energy consumption, enabling extended battery life or energy harvesting in compact devices. In modern electronics, energy efficiency isn’t just a benefit ...

This article explores the differences between inverters based on silicon power devices and those utilizing WBG technologies, evaluating their advantages, disadvantages, and suitability for different ...

To fully maximize the benefits of WBG tech, system redesign is essential. Wide-bandgap (WBG) semiconductors, namely silicon carbide and gallium nitride, have been an emerging frontier in power ...

One of the more spirited seminars at APEC, due to its topic of GaN versus SiC, was an insightful discussion with many compelling arguments. Wide-bandgap semiconductors—specifically gallium nitride and ...

Future Electronics’ power system design laboratory, based in London, has implemented a SiC-MOSFET-based design for a 3-kW LLC power supply, which steps a nominal 390-VDC input down to a 49-VDC nominal ...

CooliBlade’s patented NEOcore thermal management solution achieves up to 1,000 times higher thermal conductivity than aluminum. As modern power electronics become more compact and powerful, they face ...

2024 has been a crucial year for the power electronics sector in terms of development, preparing for radical changes in 2025 and beyond. 2024 has been a crucial year for the power electronics sector ...

If power is also supplied, the Single Pair Ethernet transmission standard with Power over Data Line is unbeatably simple. The reference design for Single Pair Ethernet (SPE) with Power over Data Line ...

With the increasing adoption of EVs and a growing focus on environmental sustainability, electric motors are expected to be used more extensively. Electric motors are the beating heart of sustainable ...

While the failure mechanisms in gallium nitride (GaN) high electron mobility transistors (HEMTs) have been widely studied and significant improvements made in their reliability, this field is still ...

In this article, based on a whitepaper by Littelfuse, we discuss the key factors that affect failure rates of cosmic devices due to cosmic radiation. Energetic particles affect semiconductor chips ...